| PART |
Description |
Maker |
| RA08H1317M_06 RA08H1317M RA08H1317M-101 RA08H1317M |
RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD02MUS1B10 |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
Mitsubishi Electric Semiconductor
|
| RD12MVP110 |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
|
Mitsubishi Electric Semiconductor
|
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| RA07M1317MSA-101 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M10 |
135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA13H1317M10 |
135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| M67781 M67781H |
135-160MHz / 12.5V / 40W / FM MOBILE RADIO
RF POWER MODULE 150-175MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| RQL |
rohs compliance
|
Surge Components
|
